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Dynamical offset charges in single-electron transistors

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PHYSICAL REVIEW LETTERS
卷 87, 期 18, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.87.186805

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To explain our observations of anomalous, transport through a single-electron transistor we propose a model where a charged two-level system is coupled to the device. The state of the two-level system depends self-consistently on the state of the transistor, leading to stable gate-voltage-controlled configurations of the offset charge at low bias, and dynamical switching behavior at high bias. This phenomenon may impact applications of single electronics, as, well as fundamental measurements in quantum dots.

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