4.8 Review

Materials processing by gas cluster ion beams

期刊

MATERIALS SCIENCE & ENGINEERING R-REPORTS
卷 34, 期 6, 页码 231-295

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/S0927-796X(01)00034-1

关键词

gas cluster ion beam (GCIB); scanning tunneling microscope (STM); time-of-flight (TOF)

向作者/读者索取更多资源

This paper discusses the principles and experimental status of gas cluster ion beam (GCIB) processing as a promising surface modification technique for practical industrial applications. Theoretical and experimental characteristics of GCIB processes and of related equipment development are described from the moment of neutral cluster formation, through ionization, acceleration and impact upon a surface. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not observed in the impacts of atomic ions. Unique characteristics of GCIB bombardment have been found to offer potential for various industrial applications that cannot be achieved by conventional ion beam processing. Among prospective applications are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation. Sputtering effects produced by cluster ion impact are particularly interesting. High sputtering yields and lateral distribution of sputtered atoms cause surface smoothing effects which cannot be achieved with monomer ion beams. Surface smoothing to atomic levels is expected to become the first production use of GCIB. (C) 2001 Elsevier Science B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据