期刊
IEEE ELECTRON DEVICE LETTERS
卷 22, 期 11, 页码 527-529出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.962652
关键词
gate insulator; high-dielectric constant material; MOS device; plasma charging effect
Plasma charging effects on the gate insulator of high-dielectric constant (k) material in MOS devices deserve to be investigated because of different trap-assisted conduction mechanisms. Plasma-induced degradation in gate-leakage current and time to breakdown is clearly observed in this work. MOS device with Si3N4 film seems to have smaller degradation of gate-leakage current while it suffers shorter time to breakdown as compared to Ta2O5 samples. For devices with Ta2O5 film, a larger physical thickness suffers more reliability degradation from plasma charging damage because of the richer traps. Thus, a smaller physical thickness of high-k dielectric film is favorable for sub-micron MOS devices of ULSI application.
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