Radiation-induced defects in n-type GaN and InN

The electrical properties of the n-GaN and n-InN, subjected to proton irradiation, are studied. The irradiation of the n-InN results in an increasing concentration of charge carriers, whereas strong compensation effects take place in the proton-irradiated n-GaN. The annealing behavior of the radiation-induced defects in both materials is discussed briefly. (C) 2001 Elsevier Science B.V. All rights reserved.