Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm(2)/V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10(7), and subthreshold slope as low as 0.7 V/decade.