期刊
PHYSICA B-CONDENSED MATTER
卷 308, 期 -, 页码 730-733出版社
ELSEVIER
DOI: 10.1016/S0921-4526(01)00887-0
关键词
6B-SiC; DLTS; EPR; tungsten; tantalum
6H-SiC bulk single crystals grown by physical vapor transport (PVT) were investigated by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). One of the observed deep level defects was identified as isolated tungsten on Si sites by EPR. The electron spin of 1 could be explained by W5+ (5d(1)). This is equivalent to the single positive charge state of a double donor when taking into account the Fermi level position in the n-type samples. The interpretation is also consistent with the DLTS detection of a W related deep level which showed a behavior of the capture of electrons and holes that hints at a double donor. In addition a tantalum related deep level is tentatively discussed. W and Ta were incorporated on electrically active sites in 6H-SiC only in low concentrations (2-4 x 10(4) cm(-3)) during crystal growth by PVT. (C) 2001 Elsevier Science B.V. All rights reserved.
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