期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 36, 期 12, 页码 2049-2059出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/4.972156
关键词
ADC; CMOS image sensor; digital pixel sensor; high-speed imaging; image sensor; memory
A 352 x 288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-mum CMOS process is described. The chip performs snapshot image acquisition, parallel 8-bit A/D conversion, and digital readout at continuous rate of 10000 frames/s or 1 Gpixels/s with power consumption of 50 mW. Each pixel consists of a photogate circuit, a three-stage comparator, and an 8-bit 3T dynamic memory comprising a total of 37 transistors in 9.4 x 9.4 mum with a fill factor of 15%. The photogate quantum efficiency is 13.6%, and the sensor conversion gain is 13.1 muV/e(-). At 1000 frames/s, measured integral nonlinearity is 0.22% over a 1-V range, rms temporal noise with digital CDS is 0.15%, and rms FPN with digital CDS is 0.027%. When operated at low frame rates, on-chip power management circuits permit complete powerdown between each frame conversion and readout. The digitized pixel data is read out over a 64-bit (8-pixel) wide bus operating at 167 MHz, i.e., over 1.33 GB/s. The chip is suitable for general high-speed imaging applications as well as for the implementation of several still and standard video rate applications that benefit from high-speed capture, such as dynamic range enhancement, motion estimation and compensation, and image stabilization.
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