期刊
CHEMISTRY OF MATERIALS
卷 13, 期 12, 页码 4506-4511出版社
AMER CHEMICAL SOC
DOI: 10.1021/cm011046+
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The atomic layer deposition (ALD) of TiO2 from TiCl4 and D2O at 150-400 degreesC was studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). The ALD growth proceeds via exchange reactions on the film surface. In the first step, TiCl4 is introduced on a surface covered with -OD groups which then become replaced with -O-TiClx species, and DO is released as a volatile byproduct. In the second step, the incoming D2O reacts with the surface -Cl atoms replacing them with -OD groups and, again, DCl is released. When the temperature is increased from 150 to 250 degreesC, the number of -Cl ligands released during the TiCl4 pulse decreases from about two to one. At temperatures higher than 250 degreesC, less than one -Cl ligand is released, indicating molecular adsorption of TiCl4.
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