期刊
JOURNAL OF APPLIED PHYSICS
卷 90, 期 12, 页码 6172-6176出版社
AMER INST PHYSICS
DOI: 10.1063/1.1410894
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We demonstrate that x-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of DX centers. A high quantum yield (>1) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons. (C) 2001 American Institute of Physics.
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