期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 87, 期 3, 页码 297-302出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0921-5107(01)00728-0
关键词
praseodymium oxide; epitaxial growth; high-K dielectric
Praseodymium oxide is a potential high-K dielectric with promising electrical properties. Here, we present results for crystalline growth of prascodymium oxide on Si. On Si(001) surfaces, crystalline Pr2O3 grows as (110) domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(111). These layers can also be overgrown epitaxially with silicon. All layer growth experiments were performed using solid source molecular beam epitaxy. In addition, the initial stages of growth were studied by scanning tunneling microscopy. (C) 2001 Elsevier Science B.V. All rights reserved.
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