期刊
PHYSICAL REVIEW B
卷 65, 期 3, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.65.035205
关键词
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We present an ab initio many-body formalism for computing the frequency-dependent second-harmonic polarizability of semiconductor materials that includes both local-field and excitonic effects. We calculate the second-harmonic polarizability for AlP, AlAs, GaP, and GaAs. In each case, excitonic effects increase the value of the second-harmonic polarizability by about 20%.
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