期刊
PHYSICAL REVIEW B
卷 65, 期 4, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.65.041306
关键词
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We investigate spin-polarized inter-band tunneling through measurement of a (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.
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