期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 41, 期 1AB, 页码 L24-L27出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.41.L24
关键词
(InGaMn)As; quaternary alloy; magnetic semiconductor; molecular beam epitaxy; magneto-optical effect; spin electronics
We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs subtrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below similar to 30 K. exhibiting a strong maganeto-optical effect. The lattice constant of [(InyGa1-y)(1-x)Mn-x]As, A hose Mn concentration x is below 4%. is slightly smaller than that of InvGa1-v, As with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III-V opto-electronics.
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