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β-Ga2O3 nanowires synthesized from milled GaN powders

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APPLIED PHYSICS LETTERS
卷 80, 期 3, 页码 479-481

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AMER INST PHYSICS
DOI: 10.1063/1.1435073

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White-colored materials synthesized by a thermal annealing of milled GaN powders at 930degreesC in a nitrogen atmosphere were identified to be monoclinic beta-Ga2O3 nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length. (C) 2002 American Institute of Physics.

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