期刊
APPLIED PHYSICS LETTERS
卷 80, 期 7, 页码 1174-1176出版社
AMER INST PHYSICS
DOI: 10.1063/1.1450249
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Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800 degreesC on Al2O3((1) over bar 10 (2) over bar) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV. (C) 2002 American Institute of Physics.
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