期刊
APPLIED PHYSICS LETTERS
卷 80, 期 8, 页码 1376-1378出版社
AMER INST PHYSICS
DOI: 10.1063/1.1452789
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Using first-principles total energy calculations, we have studied self-doping in the ternary transparent conducting oxide, Cd2SnO4. Formation of the CdO and SnO2 binaries limits ale inverse spinel CdSnO4 phase into a narrow region in the atomic chemical potential (mu) space. This suggests that mu(Sn) is not independent of mu(Cd), so a Cd-rich growth or annealing condition also implies Sn-rich, and vice versa. We found that the widely accepted intrinsic donors such as oxygen vacancy and cadmium interstitial are not responsible for the observed conductivity in Cd2SnO4: both require too much energy to form. In addition, the oxygen vacancy is rather deep. We show instead that the Sn-on-Cd antisite defect is the most probable donor responsible for the n typeness under Cd-rich conditions. (C) 2002 American Institute of Physics.
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