Schottky diode with Ag on (11(2)over-bar0) epitaxial ZnO film

Silver Schottky contacts were fabricated on (11 (2) over bar0) n-ZnO epilayers, which were grown on R-plane sapphire substrates by metalorganic chemical-vapor deposition. The flatband barrier height was determined to be 0.89 and 0.92 eV by current-voltage and capacitance-voltage measurements, respectively. The ideality factor was found to be 1.33. (C) 2002 American Institute of Physics.