Composition control of Hf1-xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

Hafnium silicate (Hf1-xSixO2) films were deposited by metalorganic chemical-vapor deposition with composition x ranging from 0 to 1 using amide precursors in an organic solvent. The liquid precursors, tetrakis(diethylamido)hafnium, Hf[N(C2H5)(2)](4), and tetrakis(dimethylamido)silicon, Si[N(CH3)(2)](4), are compatible when mixed in solution, have high elemental purity, and exhibit a low halogen content. Thin oxide films were deposited with these precursors over a range of wafer temperatures from 400 to 600 degreesC with very low carbon and nitrogen incorporation. Control of the film composition is attained by changing the ratio of silicon concentration to hafnium concentration in the precursor solution for specific deposition conditions. Composition and growth rate are reported as a function of process condition. Interfacial layers of less than 10 A were observed by high-resolution transmission electron microscopy. (C) 2002 American Institute of Physics.