期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 49, 期 4, 页码 590-597出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.992867
关键词
copper-diffusion barrier; copper resistance; copper resistivity; electron surface scattering; interconnect performance; interconnect temperature
A realistic assessment of future interconnect performance is addressed, specifically, by modeling copper (Cu) wire effective resistivity in the light of technological and reliability constraints. The scaling-induced rise in resistance in the future may be significantly exacerbated due to an increase in Cu resistivity it-self, through both electron surface scattering and diffusion barrier effect. The impact of these effects on resistivity is modeled under various technological conditions and constraints. These constraints include the interconnect operation temperature, the effect of copper-diffusion barrier thickness and its deposition technology, and the quality of interconnect/barrier interface. Reliable effective resistivity trends are established at various tiers of interconnects, namely, at the local, semiglobal, and global levels. Detailed implications of the effect of resistivity trends on performance are addressed in the second part of this work.
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