期刊
JOURNAL OF CRYSTAL GROWTH
卷 237, 期 -, 页码 1-7出版社
ELSEVIER
DOI: 10.1016/S0022-0248(01)01840-1
关键词
adsorption; diffusion; growth models; molecular beam epitaxy; semiconducting silicon
First-principle total-energy calculations performed for group-IV adatom diffusion on hydrogenated Si(1 0 0) surfaces are reviewed. Elementary atomic reactions during surface diffusion are identified. The morphology of epitaxially grown films is discussed based on quantum mechanical calculations. (C) 2002 Elsevier Science B.V. All rights reserved.
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