期刊
APPLIED PHYSICS LETTERS
卷 80, 期 14, 页码 2568-2570出版社
AMER INST PHYSICS
DOI: 10.1063/1.1467980
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We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be similar to10(4) times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and, therefore, a greatly increased contribution of tunneling to the electrical transport. (C) 2002 American Institute of Physics.
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