期刊
APPLIED PHYSICS LETTERS
卷 80, 期 15, 页码 2666-2668出版社
AMER INST PHYSICS
DOI: 10.1063/1.1469661
关键词
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Real time spectroscopic ellipsometry has been applied to develop extended phase diagrams that can guide the deposition of hydrogenated silicon (Si:H) thin films for highest performance solar cells. Previous such studies have shown that optimization of amorphous Si:H intrinsic layers by rf plasma-enhanced chemical vapor deposition (PECVD) is achieved using the maximum possible H-2 dilution of SiH4 while avoiding a transition to the mixed-phase (amorphous+microcrystalline) growth regime. In this study, we propose that optimization of amorphous Si:H in higher rate rf PECVD processes further requires the largest possible thickness onset for a surface roughening transition detected in the amorphous film growth regime. (C) 2002 American Institute of Physics.
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