期刊
APPLIED PHYSICS LETTERS
卷 80, 期 15, 页码 2749-2751出版社
AMER INST PHYSICS
DOI: 10.1063/1.1468915
关键词
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Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal-oxide-semiconductor structures is illustrated. Using this method, barrier heights associated with the Al2O3 gate dielectric films are investigated. Also, the main conduction mechanism in Al2O3 gate dielectric films is identified to be tunneling. (C) 2002 American Institute of Physics.
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