期刊
SURFACE SCIENCE
卷 504, 期 1-3, 页码 183-190出版社
ELSEVIER
DOI: 10.1016/S0039-6028(02)01065-8
关键词
low energy electron diffraction (LEED) lanthanides; silicides; silicon; germanium; metal-semiconductor interfaces
Quantitative low energy electron diffraction (LEED) studies have been carried out to determine the structure of the rare-earth germanide Ge(1 1 1)1 x 1-Dy and the rare-earth silicide Si(1 1 1)1 x 1-Dy. The analyses reveal structures similar to that of other rare-earth silicides previously studied in which the dysprosium is located sub-surface below a reverse-buckled silicon/germanium bilayer. The LEED study has clearly demonstrated that the dysprosium atom is located above a substrate T4 site and refines earlier MEIS results. (C) 2002 Elsevier Science B.V. All rights reserved.
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