4.6 Article

Thin-film transistors based on well-ordered thermally evaporated naphthacene films

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APPLIED PHYSICS LETTERS
卷 80, 期 16, 页码 2925-2927

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AMER INST PHYSICS
DOI: 10.1063/1.1471378

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We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm(2)/V s, current on/off ratio greater than 10(6), negative threshold voltage, and subthreshold slope of 1 V/decade. (C) 2002 American Institute of Physics.

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