Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method

An improved method based on a computer-aided curve fitting technique that uses vertical optimization for the simultaneous determination of various Schottky diode parameters (I-S, n, R-S, and G(P)) From the I-V characteristics has been re-examined. In particular, it is shown that the inclusion of the effect of a shunt Conductance ill the analysis of transport properties allows the determination of more realistic values for the parameters of various quality diodes. The present method appears to be accurate even in the presence of noise and/or random errors during measurements. (C) 2002 Elsevier Science Ltd. All rights reserved.