期刊
APPLIED PHYSICS LETTERS
卷 80, 期 18, 页码 3364-3366出版社
AMER INST PHYSICS
DOI: 10.1063/1.1474610
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The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al2O3 tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 muA and magnetocurrent changes of 64% are obtained at room temperature. (C) 2002 American Institute of Physics.
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