期刊
JOURNAL OF APPLIED PHYSICS
卷 91, 期 10, 页码 8088-8092出版社
AMER INST PHYSICS
DOI: 10.1063/1.1456396
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Ferromagnetic nanoscale zinc-blende MnAs dots were successfully fabricated on a sulfur-passivated GaAs (001) surface by molecular-beam epitaxy. Transmission electron microscopy and selected area electron diffraction showed that the crystalline structure was not the same as that of bulk MnAs with NiAs-type hexagonal crystalline structure, but of zinc-blende type. In in situ photoemission spectroscopy of the zinc-blende MnAs dots, the Fermi edge was not clearly observed and the Mn 3d partial density of states was similar to that of the diluted ferromagnetic semiconductor Ga1-xMnxAs, which also supports the fabrication of zinc-blende MnAs in the nanoscale. (C) 2002 American Institute of Physics.
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