Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN -: art. no. 205202

Irradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at similar to0.95 eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S=1 center is observed by optical detection of electron paramagnetic resonance to emerge in it. Labeled L8, its D tensor suggests a Frenkel excitonic state with the two s=1/2 particles separated along the off-c-axis Ga-N bond direction by the Ga-N bond distance. Other centers are weakly observed in the infrared band which anneal at room temperature.