期刊
APPLIED PHYSICS LETTERS
卷 80, 期 21, 页码 3964-3966出版社
AMER INST PHYSICS
DOI: 10.1063/1.1481533
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GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at. % were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a T-C above room temperature. (C) 2002 American Institute of Physics.
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