期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 93, 期 1-3, 页码 77-84出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0921-5107(02)00043-0
关键词
GaN; Si; light emitting diodes; metalorganic chemical vapor deposition
Cracking of GaN on Si usually occurs due to the large thermal mismatch of GaN and Si when layer thicknesses exceed approximately 1 mum in metalorganic chemical vapor deposition (MOCVD) preventing the realization of device-quality material. The thermal stress can be reduced significantly by a combination of different concepts such as the insertion of low-temperature AlN interlayers, introducing multiple AlGaN/GaN interlayers, and growing on prepatterned substrates. The growth of crack-free GaN-based light emitting diodes (LEDs) on silicon on patterned Si(111) with areas of 100 mum x 100 mum is reported. (C) 2002 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据