Preparation and electrical properties of Ba(Ti1-xZrx)O3 thin films by hydrothermal method

Ba(Ti1-xZrx)O-3 thin films have been synthesized on the titanium substrates at 160degreesC by hydrothermal method. The surface roughness (Ra) of the film was 0.096 mum. The molar ratio of Zr/Ti of the film analyzed by EDS was 0.25/0.75. The film microstructure depended strongly on both starting materials and KOH concentration. The grain size became larger from approximately 0.6 to 1 mum with increasing KOH concentration from 1 X 10(-3) to 3.5 X 10(-3) mol(.)m(-3) at an aqueous solution of 7.8 X 10(-5) mol(.)m(-3). The Ba (Ti0.75Zr0.25)O-3 thin film synthesized in an aqueous solution of 7.8 X 10(-5) mol(.)m(-3) containing 3.5 X 10(-3) mol(.)m(-3) KOH showed a dielectric constant of about 426 and dielectric loss of about 0.077 at 1 kHz. The transition point between the ferroelectric and paraelectric phases of the film heat-treated at 300degreesC for 0.5 h was approximately 10degreesC.