One transistor ferroelectric memory with Pt/Pb5Ge3O11/Ir/Poly-Si/SiO2/Si gate stack

One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb5Ge3O11/Ir/Poly-Si/SiO2/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from CV and IV measurements. The memory window decays rapidly within 10 seconds after programming, but remains stable at I V for up to 100 h. The on and off state currents are greater than 10 muA/mum and less 0.01 pA/mum, respectively, at a drain voltage of 0.1 V.