期刊
SURFACE SCIENCE
卷 507, 期 -, 页码 582-587出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(02)01404-8
关键词
surface electronic phenomena (work function, surface potential, surface states, etc.); scanning tunneling microscopy; scanning tunneling spectroscopies; silicon; single crystal epitaxy
The structural features and electronic structure of a nanoscale rounded Si island on the Si(1 1 1) substrate are investigated with scanning tunneling microscopy and scanning tunneling spectroscopy. The rounded island is composed of 162 atoms which arrange in three reconstructed 5 x 5 unit cells. The structural features and electronic structure of the island show the following: the dangling bonds on the outside adatoms of the island have a high density of states compared with that on the inside adatoms; and the height of the outside adatoms is slightly higher than that of the inside adatoms. These results are attributed to a charge transfer caused by the structural relaxation to stabilize the rounded island. (C) 2002 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据