期刊
SURFACE SCIENCE
卷 507, 期 -, 页码 223-228出版社
ELSEVIER
DOI: 10.1016/S0039-6028(02)01216-5
关键词
angle resolved photoemission; surface electronic phenomena (work function; surface potential, surface states, etc.); semiconducting films; gallium nitride; low index single crystal surfaces
Angle-resolved photoemission measurements on gallium nitride single crystals and epitaxial thin films with wurtzite Structure were performed using synchrotron radiation. Calculated theoretical final state hands were used to determine the corresponding k vectors in reciprocal space using the direct transition model. We were able to identify several previously unobserved features including several surface states and transitions to non-free-electron final states. Significant differences in the surface electronic band structure between thin film and single crystal samples were observed. (C) 2002 Elsevier Science B.V. All rights reserved.
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