We investigate the effect of quantum confinement on the electronic structure of diluted magnetic semiconductor Ga1-xMnxAs using a combination of tight-binding and density functional methods. We observe half metallic behavior in the clusters as well as a strong majority-spin Mn d-As p hybridization down to sizes as small as 20 Angstrom in diameter. Below this size, the doped holes are significantly self-trapped by the Mn sites, signaling both valence and electronic transitions. Our results imply that magnetically doped III-V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the magnetic properties and even enhancing them in certain size regimes.
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