期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 49, 期 6, 页码 1077-1079出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.1003752
关键词
asymmetric channel; charge-pumping; halo doping; hotcarrier; LAC; MOSFET optimization; p-MOSFET
Single halo p-MOSFETs with channel lengths down to 100 urn are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle V-T adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes.
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