期刊
PHYSICAL REVIEW LETTERS
卷 88, 期 22, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.88.226801
关键词
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A new method of fabricating small metal-molecule-metal junctions is developed, approaching the single-molecule limit. The conductance of different conjugated molecules in a broad temperature, source-drain, and gate voltage regime is reported. At low temperature, all investigated molecules display sharp conductance steps periodic in source-drain voltage. The position of these steps can be controlled by a gate potential. The spacing corresponds to the energy of the lowest molecular vibrations. These results show that the low-bias conductance of molecules is dominated by resonant tunneling through coupled electronic and vibration levels.
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