期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0168-9002(01)02147-7
关键词
SiC diamond; silicon; GaAs; hadrons; radiation damage properties
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV. is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs. (C) 2001 Elsevier Science B.V. All rights reserved.
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