期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 41, 期 6B, 页码 L663-L664出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.41.L663
关键词
InGaN; LED on Si; MOCVD; AIN layer; AIN/GaN multilayers
We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (I 11) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AIN layer and AIN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Omega, an optical output power of 18 muW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据