期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 41, 期 6B, 页码 L672-L674出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.41.L672
关键词
ZnS buffer; Cu(In,Ga)Se-2; thin-film solar cells; loss analysis; ZnO
Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se-2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS/CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.
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