期刊
APPLIED PHYSICS LETTERS
卷 80, 期 25, 页码 4858-4860出版社
AMER INST PHYSICS
DOI: 10.1063/1.1489098
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A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. (C) 2002 American Institute of Physics.
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