期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 14, 期 24, 页码 5979-6004出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/14/24/307
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A critical review of our understanding of the reversible phase transition root3 x root3 <----> 3 x 3 for the alpha-phase of the Sn/Ge(111) and Sn/Si(111) interfaces is presented. Experimental data and theoretical calculations suggest the following. (a) Sn/Ge(111) presents a reversible phase transition associated with the freezing of a surface soft phonon. At high temperature the dynamical fluctuations of the underlying 3 x 3 structure give rise to the observed root3- x root3 symmetry. (b) Sn/Si(111) does not present the 3 x 3 phase although the root3 x root3 reconstruction should be understood within the dynamical fluctuations model found for Sn/Ge(111). (c) These properties are modulated, but not substantially modified, by either defects or by electron many-body effects. We discuss these two cases and analyse how they affect the surface geometry and the electronic properties of the system.
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