A new high performance phase shifter using BaxSr1-xTiO3 thin films

In this paper, a new device topology has been proposed to implement parallel plate capacitors using BaxSr1-xTiO3 (BST) thin films. The device layout utilizes a single parallel capacitor and minimizes conductor losses in the base electrode. The new design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-Band 180degrees phase shifter has been implemented using the new device design. The circuit provided 240degrees phase shift with an insertion loss of only 3 dB at 10 GHz at room temperature. We have shown a figure of merit 93degrees/dB at 6.3 GHz and 87degrees/dB at 8.5 GHz. To our knowledge, these are the best figure of merit results reported in the literature for distributed phase shifters implemented using BST films at room temperature.