期刊
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
卷 149, 期 7, 页码 G376-G378出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.1479163
关键词
-
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O-2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm(-1) typical of a highly disordered silicon network. After annealing at temperatures above 1000degreesC in N-2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. (C) 2002 The Electrochemical Society.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据