Device performance of an n-channel organic thin-film transistor with LiF/Al bilayer source and drain electrodes

We investigated the device properties of a copper (II) perfluorophthalocyanine (F16CuPc)-based n-channel organic thin-film transistor (TFT) with source and drain electrodes consisting of an LiF/Al bilayer. We clarified that the LiF thin film intercalated between the F16CuPc and Al layers played a key role in the observed field-effect transistor characteristics of the TFT. We concluded that the contact resistance was effectively reduced by the LiF layer, providing protection against an unfavorable chemical reaction with Al and possible formation of n-doped regions in the vicinity of the LiF/Al electrodes of the F16CuPc layer.