期刊
JOURNAL OF APPLIED PHYSICS
卷 117, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4906496
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资金
- Semiconductor Research Corporation (SRC)
- Defense Advanced Research Project Agency (DARPA) through STARnet Center for Function Accelerated nanoMaterial Engineering (FAME)
- National Science Foundation (NSF) [NSF CCF-1217382]
- Russian Fund for Basic Research (RFBR)
- NSF under the EAGER program
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1346786] Funding Source: National Science Foundation
We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a memory step, was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors. (C) 2015 AIP Publishing LLC.
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