期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 38, 期 8, 页码 975-987出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2002.800962
关键词
epitaxial growth; nanotechnology; photoluminescence; quantum dots; semiconductor epitaxial dots
The morphological evolution of self-assembled epitaxial quantum dots on Si(100) is reviewed. This intensely investigated material system continues to provide fundamental insight guiding the growth of nanostructured electronic materials. Self-assembled quantum dots are faceted, three-dimensional islands which grow atop a planar wetting layer. Pure Ge growth at higher substrate temperatures results in narrower island size distributions but activates additional strain-relief mechanisms which will alter the optical and electronic properties of the dots. Optical and electrical characterization has shown that electrons and holes are confined to different regions of the dot. This results in a spatially indirect, type II recombination mechanism. Emerging device applications which exploit properties of these nanoscale Ge islands are discussed.
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