期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 17, 期 8, 页码 769-777出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/17/8/305
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III-N-V semiconductors are promising materials for use in next-generation multijunction solar cells because these materials can be lattice matched to substrates such as GaAs, Ge and Si, with a range of bandgaps that are complementary to those of other III-V semiconductors. Several potentially high-efficiency multijunction photovoltaic device designs using III-N-V materials are discussed. The main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III-N-V materials. The present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs lattice matched to Si is reviewed.
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