期刊
IEEE ELECTRON DEVICE LETTERS
卷 23, 期 8, 页码 452-454出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2002.801295
关键词
AlGaN; GaN; heterostructure field-effect transistor (HFET); junction field-effect transistor (JFET)
A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n(+)-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.
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